參數(shù)資料
型號： KAB03D100M-TNGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Multi-Chip Package MEMORY
中文描述： 多芯片封裝存儲器
文件頁數(shù)： 47/72頁
文件大?。?/td> 1378K
代理商： KAB03D100M-TNGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 47 -
MCP MEMORY
SEC Only
NOR Flash AC CHARACTERISTICS
Write(Erase/Program)Operations
Alternate CE
R
Controlled Writes
NOTES:
1. Not 100% tested.
2.This does not include the preprogramming time.
Parameter
Symbol
70ns
80ns
Unit
Min
Max
Min
Max
Write Cycle Time (1)
t
WC
70
-
80
-
ns
Address Setup Time
t
AS
0
-
0
-
ns
Address Hold Time
t
AH
45
-
45
-
ns
Data Setup Time
t
DS
35
-
35
-
ns
Data Hold Time
t
DH
0
-
0
-
ns
Output Enable Setup Time (1)
t
OES
0
-
0
-
ns
Output Enable
Hold Time
Read (1)
t
OEH1
0
-
0
-
ns
Toggle and Data Polling (1)
t
OEH2
10
-
10
-
ns
WE Setup Time
t
WS
0
-
0
-
ns
WE Hold Time
t
WH
0
-
0
-
ns
CE
R
Pulse Width
t
CP
35
-
35
-
ns
CE
R
Pulse Width High
t
CPH
25
-
25
-
ns
Programming Operation
Word
t
PGM
14(typ.)
14(typ.)
μ
s
μ
s
μ
s
μ
s
Byte
9(typ.)
9(typ.)
Accelerated Programming Operation
Word
t
ACCPGM
9(typ.)
9(typ.)
Byte
7(typ.)
7(typ.)
Block Erase Operation (2)
t
BERS
0.7(typ.)
0.7(typ.)
sec
BYTE Switching Low to Output HIGH-Z
t
FLQZ
25
-
25
-
ns
ERASE AND PROGRAM PERFORMANCE
NOTES:
1. 25
°
C, Vcc
R
=
2.9V 100,000 cycles, typical pattern
.
2. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte.
In the preprogramming step of the Internal Erase Routine, all bytes are programmed to 00H before erasure.
Parameter
Limits
Unit
Comments
Min
Typ
Max
Block Erase Time
-
0.7
15
sec
Excludes 00H programming
prior to erasure
Chip Erase Time
-
98
-
sec
Word Programming Time
-
14
330
μ
s
μ
s
μ
s
μ
s
Excludes system-level overhead
Byte Programming Time
-
9
210
Excludes system-level overhead
Accelerated Byte/Word
Program Time
Word Mode
-
9
210
Excludes system-level overhead
Byte Mode
-
7
150
Excludes system-level overhead
Chip Programming Time
Word Mode
-
59
177
sec
Excludes system-level overhead
Byte Mode
-
75
225
sec
Erase/Program Endurance
100,000
-
-
cycles
Minimum 100,000 cycles guaran-
teed
相關(guān)PDF資料
PDF描述
KAB04D100M-TLGP Multi-Chip Package MEMORY
KAB04D100M-TNGP Multi-Chip Package MEMORY
KAB01D100M Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
KAB02D100M-TLGP Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
KAB01D100M-TNGP CONNECTOR ACCESSORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KAB04D100M-TLGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB-1 功能描述:保險絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485
KAB-1/2 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE
KAB-10 功能描述:保險絲 10A RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485
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