參數(shù)資料
型號： KAB03D100M-TLGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Multi-Chip Package MEMORY
中文描述： 多芯片封裝存儲器
文件頁數(shù)： 9/72頁
文件大?。?/td> 1378K
代理商： KAB03D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 9 -
MCP MEMORY
SEC Only
Table 3.
NOR Flash Memory Bottom Boot
Block Address (KAB01D100/KAB03D100)
KAB
01D1
00
KAB
03D1
00
Block
Block Address
Block Size
(KB/KW)
Address Range
A21
A20
A19
A18
A17
A16
A15
A14
A13
A12
Byte Mode
Word Mode
Bank2
Bank2
BA134
1
1
1
1
1
1
1
X
X
X
64/32
7F0000H-7FFFFFH
3F8000H-3FFFFFH
BA133
1
1
1
1
1
1
0
X
X
X
64/32
7E0000H-7EFFFFH
3F0000H-3F7FFFH
BA132
1
1
1
1
1
0
1
X
X
X
64/32
7D0000H-7DFFFFH
3E8000H-3EFFFFH
BA131
1
1
1
1
1
0
0
X
X
X
64/32
7C0000H-7CFFFFH
3E0000H-3E7FFFH
BA130
1
1
1
1
0
1
1
X
X
X
64/32
7B0000H-7BFFFFH
3D8000H-3DFFFFH
BA129
1
1
1
1
0
1
0
X
X
X
64/32
7A0000H-7AFFFFH
3D0000H-3D7FFFH
BA128
1
1
1
1
0
0
1
X
X
X
64/32
790000H-79FFFFH
3C8000H-3CFFFFH
BA127
1
1
1
1
0
0
0
X
X
X
64/32
780000H-78FFFFH
3C0000H-3C7FFFH
BA126
1
1
1
0
1
1
1
X
X
X
64/32
770000H-77FFFFH
3B8000H-3BFFFFH
BA125
1
1
1
0
1
1
0
X
X
X
64/32
760000H-76FFFFH
3B0000H-3B7FFFH
BA124
1
1
1
0
1
0
1
X
X
X
64/32
750000H-75FFFFH
3A8000H-3AFFFFH
BA123
1
1
1
0
1
0
0
X
X
X
64/32
740000H-74FFFFH
3A0000H-3A7FFFH
BA122
1
1
1
0
0
1
1
X
X
X
64/32
730000H-73FFFFH
398000H-39FFFFH
BA121
1
1
1
0
0
1
0
X
X
X
64/32
720000H-72FFFFH
390000H-397FFFH
BA120
1
1
1
0
0
0
1
X
X
X
64/32
710000H-71FFFFH
388000H-38FFFFH
BA119
1
1
1
0
0
0
0
X
X
X
64/32
700000H-70FFFFH
380000H-387FFFH
BA118
1
1
0
1
1
1
1
X
X
X
64/32
6F0000H-6F1FFFH
378000H-37FFFFH
BA117
1
1
0
1
1
1
0
X
X
X
64/32
6E0000H-6EFFFFH
370000H-377FFFH
BA116
1
1
0
1
1
0
1
X
X
X
64/32
6D0000H-6DFFFFH
368000H-36FFFFH
BA115
1
1
0
1
1
0
0
X
X
X
64/32
6C0000H-6CFFFFH
360000H-367FFFH
BA114
1
1
0
1
0
1
1
X
X
X
64/32
6B0000H-6BFFFFH
358000H-35FFFFH
BA113
1
1
0
1
0
1
0
X
X
X
64/32
6A0000H-6AFFFFH
350000H-357FFFH
BA112
1
1
0
1
0
0
1
X
X
X
64/32
690000H-69FFFFH
348000H-34FFFFH
BA111
1
1
0
1
0
0
0
X
X
X
64/32
680000H-68FFFFH
340000H-347FFFH
BA110
1
1
0
0
1
1
1
X
X
X
64/32
670000H-67FFFFH
338000H-33FFFFH
BA109
1
1
0
0
1
1
0
X
X
X
64/32
660000H-66FFFFH
330000H-337FFFH
BA108
1
1
0
0
1
0
1
X
X
X
64/32
650000H-65FFFFH
328000H-32FFFFH
BA107
1
1
0
0
1
0
0
X
X
X
64/32
640000H-64FFFFH
320000H-327FFFH
BA106
1
1
0
0
0
1
1
X
X
X
64/32
630000H-63FFFFH
318000H-31FFFFH
BA105
1
1
0
0
0
1
0
X
X
X
64/32
620000H-62FFFFH
310000H-317FFFH
BA104
1
1
0
0
0
0
1
X
X
X
64/32
610000H-61FFFFH
308000H-30FFFFH
BA103
1
1
0
0
0
0
0
X
X
X
64/32
600000H-60FFFFH
300000H-307FFFH
BA102
1
0
1
1
1
1
1
X
X
X
64/32
5F0000H-5FFFFFH
2F8000H-2FFFFFH
BA101
1
0
1
1
1
1
0
X
X
X
64/32
5E0000H-5EFFFFH
2F0000H-2F7FFFH
BA100
1
0
1
1
1
0
1
X
X
X
64/32
5D0000H-5DFFFFH
2E8000H-2EFFFFH
BA99
1
0
1
1
1
0
0
X
X
X
64/32
5C0000H-5CFFFFH
2E0000H-2E7FFFH
相關(guān)PDF資料
PDF描述
KAB03D100M-TNGP Multi-Chip Package MEMORY
KAB04D100M-TLGP Multi-Chip Package MEMORY
KAB04D100M-TNGP Multi-Chip Package MEMORY
KAB01D100M Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
KAB02D100M-TLGP Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KAB03D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TLGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB-1 功能描述:保險絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風格: 端接類型:SMD/SMT 系列:485
KAB-1/2 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE
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