參數(shù)資料
型號： KAB03D100M-TLGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Multi-Chip Package MEMORY
中文描述： 多芯片封裝存儲器
文件頁數(shù)： 71/72頁
文件大?。?/td> 1378K
代理商： KAB03D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 71 -
MCP MEMORY
SEC Only
Figure 31.
CS
U
WE
Address
Over 4
μ
s
tRC
toggle CS
U
to high every 4
μ
s
CS
U
WE
Address
tWP
Over 4
μ
s
tWC
Write operation has similar restriction to Read operation. If your
system has a timing which sustains invalid states over
4
μ
s at
write mode and has continuous write signals with length of Min.
tWC over
4
μ
s like Figure 32, you must toggle WE once to high
Figure 33.
Figure 32.
CS
U
WE
Address
tWP
Over 4
μ
s
tWC
tRC
Figure 34.
CS
U
WE
Address
tWP
Over 4
μ
s
tWC
tRC
and make it stay high at least for tRC every
4
μ
s or toggle CS
U
once to high for about tRC.
toggle CS
U
to high every 4
μ
s
toggle WE to high and make it stay high at least for tRC every 4
μ
s
相關(guān)PDF資料
PDF描述
KAB03D100M-TNGP Multi-Chip Package MEMORY
KAB04D100M-TLGP Multi-Chip Package MEMORY
KAB04D100M-TNGP Multi-Chip Package MEMORY
KAB01D100M Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
KAB02D100M-TLGP Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KAB03D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TLGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB-1 功能描述:保險絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485
KAB-1/2 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE
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