參數(shù)資料
型號(hào)： KAB03D100M-TLGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Multi-Chip Package MEMORY
中文描述： 多芯片封裝存儲(chǔ)器
文件頁(yè)數(shù)： 22/72頁(yè)
文件大小： 1378K
代理商： KAB03D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 22 -
MCP MEMORY
SEC Only
Figure 10. Block Group Protection & Unprotection Algorithms
NOTE:
All blocks must be protected before unprotect operation is executing.
Block Protect
Algorithm
Set up Block Group
address
Block Group Protect:
Write 60H to Block
Group address with
A6=0,A1=1
A0=0
Wait 150
μ
s
Verify Block Group
Protect:Write 40H to
Block Group address
with A6=0,
A1=1,A0=0
Read from
Block Group address
with A6=0,
A1=1,A0=0
Data=01h
Protect another
Block Group
Remove V
ID
from RESET
Write RESET
command
END
Wait 1
μ
s
First Write
Cycle=60h
Temporary Block Group
Unprotect Mode
Block Group Unprotect
Write 60H
with
A6=1,A1=1
A0=0
Wait 15ms
Verify Block Group
Unprotect:Write 40H to
Block Group address
with A6=1,
A1=1,A0=0
Read from
Block Group address
with A6=1,
A1=1,A0=0
Data=00h
Last Block Group
verified
Remove V
ID
from RESET
Write RESET
command
END
No
Increment
COUNT
COUNT
=1000
Device failed
No
Yes
Yes
No
No
Yes
Algorithm
Increment
COUNT
COUNT
=25
Device failed
No
Yes
No
All Block Groups
Protected
No
Block Group <i>, i= 0
START
COUNT = 1
RESET=V
ID
Yes
Yes
Yes
No
Block Group
Protection
Yes
No
Yes
Set up next Block
Group address
Reset
COUNT=1
Block Unprotect
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KAB03D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TLGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB-1 功能描述:保險(xiǎn)絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485
KAB-1/2 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE
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