參數(shù)資料
型號(hào)： KAB03D100M-TLGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Multi-Chip Package MEMORY
中文描述： 多芯片封裝存儲(chǔ)器
文件頁(yè)數(shù)： 66/72頁(yè)
文件大?。?/td> 1378K
代理商： KAB03D100M-TLGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 66 -
MCP MEMORY
SEC Only
Address
Data Out
Previous Data Valid
Data Valid
U
t
RAM TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
U
=OE=V
IL
, ZZ=WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(ZZ=WE=V
IH
)
t
AA
t
RC
t
OH
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
3. The minimum read cycle(
t
RC
) is determined later one of the
t
RC1
and
t
RC2.
4. t
OE
(max) is met only when
OE
becomes enable after t
AA
(max).
Data Valid
High-Z
t
RC1
t
OH
t
AA
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
t
RC2
t
CO
Address
CS
U
UB, LB
OE
Data out
相關(guān)PDF資料
PDF描述
KAB03D100M-TNGP Multi-Chip Package MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KAB03D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TLGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB04D100M-TNGP 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY
KAB-1 功能描述:保險(xiǎn)絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485
KAB-1/2 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE
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