參數(shù)資料
型號(hào)： K9K2G08U0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 8C 8#16 PIN WALL RECP
中文描述： 256M × 8位NAND閃存
文件頁(yè)數(shù)： 9/34頁(yè)
文件大?。?/td> 850K
代理商： K9K2G08U0A
FLASH MEMORY
9
K9K2G08U0A
Preliminary
AC Characteristics for Operation
NOTE
: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2.
For cache program operation, the whole AC Charcateristics must be same as that of
K9K2G08U0A*.
Parameter
Symbol
Min
Max
Unit
K9K2G08U0A*
K9K2G08U0A
K9K2G08U0A*
K9K2G08U0A
Data Transfer from Cell to Register
t
R
-
-
25
25
μ
s
ALE to RE Delay
t
AR
10
10
-
-
ns
CLE to RE Delay
t
CLR
10
10
-
-
ns
Ready to RE Low
t
RR
20
20
-
-
ns
RE Pulse Width
t
RP
25
15
-
-
ns
WE High to Busy
t
WB
-
-
100
100
ns
Read Cycle Time
t
RC
50
30
-
-
ns
RE Access Time
t
REA
-
-
30
18
ns
CE Access Time
t
CEA
-
-
45
35
ns
RE High to Output Hi-Z
t
RHZ
-
-
30
30
ns
CE High to Output Hi-Z
t
CHZ
-
-
20
20
ns
RE or CE High to Output hold
t
OH
15
15
-
-
ns
RE High Hold Time
t
REH
15
10
-
-
ns
Output Hi-Z to RE Low
t
IR
0
0
-
-
ns
RE High to WE Low
t
RHW
100
100
-
-
ns
WE High to RE Low
t
WHR
60
60
-
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
-
5/10/500
*1
5/10/500
*1
μ
s
AC Timing Characteristics for Command / Address / Data Input
NOTE
: 1. The transition of the corresponding control pins must occur only once while WE is held low.
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
3.
For cache program operation, the whole AC Charcateristics must be same as that of K9K2G08U0A*.
Parameter
Symbol
Min
Max
Unit
K9K2G08U0A*
K9K2G08U0A
K9K2G08U0A*
K9K2G08U0A
CLE setup Time
t
CLS
*1
25
15
-
-
ns
CLE Hold Time
t
CLH
10
5
-
-
ns
CE setup Time
t
CS
*1
35
20
-
-
ns
CE Hold Time
t
CH
10
5
-
-
ns
WE Pulse Width
t
WP
25
15
-
-
ns
ALE setup Time
t
ALS
*1
25
15
-
-
ns
ALE Hold Time
t
ALH
10
5
-
-
ns
Data setup Time
t
DS
*1
20
15
-
-
ns
Data Hold Time
t
DH
10
5
-
-
ns
Write Cycle Time
t
WC
45
30
-
-
ns
WE High Hold Time
t
WH
15
10
-
-
ns
ALE to Data Loading Time
t
ADL
*2
100
*2
100
*2
-
-
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G08U0A-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K2G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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