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參數(shù)資料
| 型號(hào)： | K9K2G08U0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 8C 8#16 PIN WALL RECP |
| 中文描述： | 256M × 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 34/34頁(yè) |
| 文件大小： | 850K |
| 代理商： | K9K2G08U0A |
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FLASH MEMORY
34
K9K2G08U0A
Preliminary
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
IL
during power-up and power-down. A recovery time of minimum 10
μ
s is required before internal circuit gets ready for any command
sequences as shown in Figure 18. The two step command sequence for program/erase provides additional software protection.
Figure 18. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
WE
~ 2.5V
~ 2.5V
10
μ
s
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-E | SSR H/S ZS 600V 50A 4-32VDC |
| K9XXG08UXM-K | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-P | SSR H/S ZS 600V 70A 4-32VDC |
| K9XXG08UXM-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08U0A-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-FCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-FIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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