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參數(shù)資料
| 型號： | K9K2G08U0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 8C 8#16 PIN WALL RECP |
| 中文描述： | 256M × 8位NAND閃存 |
| 文件頁數(shù)： | 27/34頁 |
| 文件大?。?/td> | 850K |
| 代理商： | K9K2G08U0A |
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FLASH MEMORY
27
K9K2G08U0A
Preliminary
Device Operation
PAGE READ
Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command
is latched. Therefore only five address cycles and 30h command initiates that operation after initial power up. The 2,112 bytes of data
within the selected page are transferred to the data registers in less than 25
μ
s(t
R
). The system controller can detect the completion of
this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read
out in 30ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the
data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
Address(5Cycle)
00h
Col Add1,2 & Row Add1,2,3
Data Output(Serial Access)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
RE
t
R
30h
I/Ox
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-E | SSR H/S ZS 600V 50A 4-32VDC |
| K9XXG08UXM-K | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-P | SSR H/S ZS 600V 70A 4-32VDC |
| K9XXG08UXM-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08U0A-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-FCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-FIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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