- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374299 > K9K2G08U0A (SAMSUNG SEMICONDUCTOR CO. LTD.) TV 8C 8#16 PIN WALL RECP PDF資料下載
參數(shù)資料
| 型號： | K9K2G08U0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 8C 8#16 PIN WALL RECP |
| 中文描述： | 256M × 8位NAND閃存 |
| 文件頁數(shù)： | 33/34頁 |
| 文件大?。?/td> | 850K |
| 代理商： | K9K2G08U0A |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁當(dāng)前第33頁第34頁
FLASH MEMORY
33
K9K2G08U0A
Preliminary
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or ran-
dom read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-
drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and current
drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be deter-
mined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
t
I
Rp(ohm)
Figure 17. Rp vs tr ,tf & Rp vs ibusy
Ibusy
tr
ibusy
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 50pF
VOH
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
50
tf
100
150
200
1.8
1.8
1.8
1.8
2.4
1.2
0.8
0.6
VOL
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
Rp(min) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
V
OL
: 0.4V, V
OH
: 2.4V
C
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-E | SSR H/S ZS 600V 50A 4-32VDC |
| K9XXG08UXM-K | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG08UXM-P | SSR H/S ZS 600V 70A 4-32VDC |
| K9XXG08UXM-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08U0A-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-FCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-FIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。