參數(shù)資料
型號(hào)： K9K2G08U0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 8C 8#16 PIN WALL RECP
中文描述： 256M × 8位NAND閃存
文件頁數(shù)： 7/34頁
文件大?。?/td> 850K
代理商： K9K2G08U0A
FLASH MEMORY
7
K9K2G08U0A
Preliminary
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Page Read with Serial
Access
I
CC
1
tRC=30ns, CE=V
IL
I
OUT
=0mA
-
10
30
mA
Program
I
CC
2
-
-
10
30
Erase
I
CC
3
-
-
10
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=0V/V
CC
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
Input High Voltage
V
IH
-
0.8xVcc
-
Vcc+0.3
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.2xVcc
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND,
:
T
A
=0 to 70
°
C, K9K2G08U0A-VIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
Temperature Under Bias
K9K2G08U0A-VCB0
T
BIAS
-10 to +125
°
C
K9K2G08U0A-VIB0
-40 to +125
Storage Temperature
K9K2G08U0A-VCB0
T
STG
-65 to +150
°
C
K9K2G08U0A-VIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
K9K2G08U0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-E SSR H/S ZS 600V 50A 4-32VDC
K9XXG08UXM-K 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-P SSR H/S ZS 600V 70A 4-32VDC
K9XXG08UXM-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G08U0A-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K2G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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