參數(shù)資料
型號(hào)： K7B403625M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Kx36-Bit Synchronous Burst SRAM
中文描述： 128K × 36至位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 6/16頁(yè)
文件大?。?/td> 439K
代理商： K7B403625M
K7B403625M
128Kx36 Synchronous SRAM
- 6 -
Rev 2.0
December 1998
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note :
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
8
pF
ABSOLUTE MAXIMUM RATINGS*
*Note :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+ 0.5
V
Power Dissipation
P
D
1.2
W
°
C
°
C
°
C
Storage Temperature
T
STG
-65 to 150
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
OPERATING CONDITIONS at 3.3V I/O
(0
°
C
≤
T
A
≤
70
°
C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.6
V
V
DDQ
3.135
3.3
3.6
V
Ground
V
SS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O
(0
°
C
≤
T
A
≤
70
°
C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.6
V
V
DDQ
2.375
2.5
2.9
V
Ground
V
SS
0
0
0
V
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