參數(shù)資料
型號(hào)： HYB5118165BJ-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： RES 10.0-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
中文描述： 1M X 16 EDO DRAM, 60 ns, PDSO42
文件頁(yè)數(shù)： 2/26頁(yè)
文件大?。?/td> 269K
代理商： HYB5118165BJ-60
Semiconductor Group
2
HYB 5116(8)165BSJ-50/-60/-70
1M x 16-EDO DRAM
The HYB 5116(8)165BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16-bits. The
HYB 5116(8)165BSJ utilizes a submicron CMOS silicon gate process technology, as well as
advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 5116(8)165BSJ to be packaged in a standard
SOJ 42 plastic package with 400 mil width. These packages provide high system bit densities and
are compatible with commonly used automatic testing and insertion equipment. System-oriented
features include single + 5 V (
±
10 %) power supply, direct interfacing with high-performance logic
device families such as Schottky TTL.
Ordering Information
Pin Names
Type
Ordering Code
Package
Descriptions
HYB 5116165BJ-50
on request
P-SOJ-42-1 400 mil
DRAM (access time 50 ns)
HYB 5116165BJ-60
on request
P-SOJ-42-1 400 mil
DRAM (access time 60 ns)
HYB 5116165BJ-70
on request
P-SOJ-42-1 400 mill
DRAM (access time 70 ns)
HYB 5118165BJ-50
Q67100-Q1107
P-SOJ-42-1 400 mil
DRAM (access time 50 ns)
HYB 5118165BJ-60
Q67100-Q1108
P-SOJ-42-1 400 mil
DRAM (access time 60 ns)
HYB 5118165BJ-70
Q67100-Q1109
P-SOJ-42-1 400 mil
DRAM (access time 70 ns)
A0-A9
Row Address Inputs for HYB5118165BSJ
A0-A9
Column Address Inputs for HYB5118165BSJ
A0-A11
Row Address Inputs for HYB5116165BSJ
A0 to A7
Column Address Inputs for HYB5116165BSJ
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O16
Data Input/Output
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
WE
V
CC
V
SS
N.C.
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
not connected
相關(guān)PDF資料
PDF描述
HYB5118165BSJ-60 1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BJ-70 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
HYB5118165BST-50 RES 110-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
HYB5118165BST-60 1M x 16-Bit Dynamic RAM 1k Refresh
HYB5116165BJ-50 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5118165BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k Refresh
HYB5118165BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BSJ-60 制造商:Siemens 功能描述:Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ
HYB5118165BSJBST-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BST-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
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