參數(shù)資料
型號： HYB18T512800AF-3.7
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512-Mbit DDR2 SDRAM
中文描述： 512兆位DDR2 SDRAM的
文件頁數(shù)： 70/117頁
文件大?。?/td> 2102K
代理商： HYB18T512800AF-3.7
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
Functional Description
Data Sheet
70
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
Power-Down Entry
Active Power-down mode can be entered after an
Activate command. Precharge Power-down mode can
be entered after a Precharge, Precharge-All or internal
precharge command. It is also allowed to enter power-
mode after an Auto-Refresh command or MRS /
EMRS(1) command when
t
MRD
is satisfied.
Active Power-down mode entry is prohibited as long as
a Read Burst is in progress, meaning CKE should be
kept HIGH until the burst operation is finished.
Therefore Active Power-Down mode entry after a Read
or Read with Auto-Precharge command is allowed after
RL + BL/2 is satisfied.
Active Power-down mode entry is prohibited as long as
a Write Burst and the internal write recovery is in
progress. In case of a write command, active power-
down mode entry is allowed when WL + BL/2 +
t
WTR
is
satisfied.
In case of a write command with Auto-Precharge,
Power-down mode entry is allowed after the internal
precharge command has been executed, which is WL
+ BL/2 + WR starting from the write with Auto-
Precharge command. In this case the DDR2 SDRAM
enters the Precharge Power-down mode.
Power-Down Exit
The power-down state is synchronously exited when
CKE is registered HIGH (along with a NOP or Deselect
command). A valid, executable command can be
applied with power-down exit latency,
t
XP
,
t
XARD
or
t
XARDS
, after CKE goes HIGH. Power-down exit
latencies are defined in
Chapter 7.2
.
Figure 55
Active Power-Down Mode Entry and Exit after an Activate Command
Note:Active Power-Down mode exit timing
t
XARD
(“fast exit”) or
t
XARDS
(“slow exit”) depends on the programmed
state in the MR, address bit A12.
Example : Active Power-Down Mode Entry and Exit after Read Command : RL = 4 (AL = 1, CL =3), BL = 4
NOP
NOP
Activate
T0
T2
T1
CMD
NOP
Tn
Tn+1
CKE
Active
Power-Down
Entry
NOP
NOP
Act.PD 0
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Command
tXARD or
tXARDS *)
CK, CK
相關(guān)PDF資料
PDF描述
HYB18T512800AF-3S 512-Mbit DDR2 SDRAM
HYB18T512800AC-37 M39012 MIL RF CONNECTOR
HYB18T512800AC-5 M39012 MIL RF CONNECTOR
HYB18T512800AC DDR2 Registered Memory Modules
HYB18T512800AF DDR2 Registered Memory Modules
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
HYB18T512800BF-3S 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR)
HYB25D128160AT-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
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