參數(shù)資料
型號: HB52RF1289E2
廠商: Hitachi,Ltd.
英文描述: 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM)
中文描述: 1 GB的注冊SDRAM的內(nèi)存(1GB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 5/21頁
文件大小: 95K
代理商: HB52RF1289E2
HB52RF1289E2-75B
5
Serial PD Matrix*
1
Byte
No.
0
Function described
Number of bytes used by
module manufacturer
Total SPD memory size
Memory type
Number of row addresses bits
Number of column addresses
bits
Number of banks
Module data width
Module data width (continued)
Module interface signal levels
SDRAM cycle time
(highest CE latency)
7.5 ns
SDRAM access from Clock
(highest CE latency)
5.4 ns
Module configuration type
Refresh rate/type
Bit
7
1
Bit
6
0
Bit
5
0
Bit
4
0
Bit
3
0
Bit
2
0
Bit
1
0
Bit
0
0
Hex val-
ue
80
Comments
128
1
2
3
4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
1
1
0
1
1
0
0
0
0
1
0
0
1
1
08
04
0D
0B
256 byte
SDRAM
13
11
5
6
7
8
9
0
0
0
0
0
0
1
0
0
1
0
0
0
0
1
0
0
0
0
1
0
1
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
1
1
02
48
00
01
75
2
72 bit
0 (+)
LVTTL
CL = 3
10
0
1
0
1
0
1
0
0
54
*
5
11
12
0
1
0
0
0
0
0
0
0
0
0
0
1
1
0
0
02
82
ECC
Normal
(7.8125
μ
s)
Self refresh
64M
×
4
×
4
1 CLK
13
14
15
SDRAM width
Error checking SDRAM width
SDRAM device attributes:
minimum clock delay for back-
to-back random column
addresses
SDRAM device attributes:
Burst lengths supported
SDRAM device attributes:
number of banks on SDRAM
device
SDRAM device attributes:
CE latency
SDRAM device attributes:
S latency
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
1
04
04
01
16
0
0
0
0
1
1
1
1
0F
1, 2, 4, 8
17
0
0
0
0
0
1
0
0
04
4
18
0
0
0
0
0
1
1
0
06
2/3
19
0
0
0
0
0
0
0
1
01
0
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