- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370430 > HB52RF1289E2 (Hitachi,Ltd.) 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM) PDF資料下載
參數(shù)資料
| 型號(hào)： | HB52RF1289E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM) |
| 中文描述： | 1 GB的注冊(cè)SDRAM的內(nèi)存（1GB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 14/21頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HB52RF1289E2 |
HB52RF1289E2-75B
14
DC Characteristics (Ta = 0 to 55
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
Notes:
1.I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2.One bank operation.
3.Input signals are changed once per one clock.
4.Input signals are changed once per two clocks.
5.Input signals are changed once per four clocks.
6.After power down mode, CK operating current.
7.After power down mode, no CK operating current.
8.After self refresh mode set, self refresh current.
HB52RF1289E2-75B
Min
Parameter
Operating current
Symbol
Max
Unit
Test conditions
Burst length = 1
t
RC
= min
CKE = V
IL
, t
CK
= 12
ns
CKE = V
IL
, t
CK
=
∞
Notes
1, 2, 3
I
CC1
I
CC2P
—
—
3215
803
mA
mA
Standby current in power
down
Standby current in power
down (input signal stable)
Standby current in non
power down
Active standby current in
power down
Active standby current in
non power down
Burst operating current
6
I
CC2PS
—
767
mA
7
I
CC2N
—
1415
mA
CKE, S = V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12
ns
CKE, S = V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
4
I
CC3P
—
839
mA
1, 2, 6
I
CC3N
—
1775
mA
1, 2, 4
I
CC4
—
3575
mA
1, 2, 5
Refresh current
I
CC5
I
CC6
—
—
5195
803
mA
mA
t
RC
= min
3
Self refresh current
V
IH
≥
V
CC
– 0.2 V
V
IL
≤
0.2 V
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
I
OH
= –4 mA
I
OL
= 4 mA
8
Input leakage current
Output leakage current
I
LI
I
LO
–10
–10
10
10
μ
A
μ
A
Output high voltage
Output low voltage
V
OH
V
OL
2.4
—
—
0.4
V
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52RF329E2 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52RF648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RD648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
| HB52RF649DC | 512MB Unbuffered SDRAM S.O.DIMM |
| HB52RD649DC-A6B | 512MB Unbuffered SDRAM S.O.DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RF1289E2-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:x72 SDRAM Module |
| HB52RF1289E2U-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC133 SDRAM |
| HB52RF328GB-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM Micro DIMM |
| HB52RF328GB-75BL | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM Micro DIMM |
| HB52RF328GB-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM Micro DIMM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。