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參數(shù)資料
| 型號： | FDS6685 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 204K |
| 代理商： | FDS6685 |
F
FDS6685 Rev. B
FDS6685
P-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
Battery protection
Load switch
Motor drives
March 1999
PRELIMINARY
Features
-8.8 A, -30 V. R
DS(ON)
= 0.020
@ V
GS
= -10 V
R
DS(ON)
= 0.035
@ V
GS
= -4.5 V
Extended V
GSS
range (
±
25V) for battery applications.
Low gate charge (19nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-30
±
25
-8.8
-50
2.5
1.2
1
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
FDS6685
Device
FDS6685
Reel Size
13
’’
Tape Width
12mm
Quantity
2500 units
5
6
8
3
1
7
4
2
S
D
S
S
SO-8
D
D
D
G
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| FDS6688 | 30V N-Channel PowerTrench MOSFET |
| FDS6689S | 30V N-Channel PowerTrench SyncFET |
| FDS6690A | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6690S | 30V N-Channel PowerTrench SyncFET⑩ |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6685 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6685_Q | 功能描述:MOSFET SO-8 SGL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6688 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6688_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDS6688_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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