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參數(shù)資料
| 型號： | FDS6689S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 16000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 120K |
| 代理商： | FDS6689S |
February 2005
2005 Fairchild Semiconductor Corporation
FDS6689S Rev
B
(W)
FDS6689S
30V N
-
Channel PowerTrench
SyncFET
General Description
The FDS6689S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6688S includes
an
integrated
Schottky
monolithic SyncFET technology.
diode
using
Fairchild’s
Applications
Synchronous Rectifier for DC/DC converter –
Notebook Vcore low side switch
Point of Load low side switch
Features
16 A, 30 V.
R
DS(ON)
= 5.4 m
@ V
GS
= 10 V
R
DS(ON)
= 6.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
100% R
G
(Gate Resistance) tested
S
D
S
S
SO-8
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
20
16
50
2.5
1.2
1
–55 to +125
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6689S
FDS6689S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6690A | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6690S | 30V N-Channel PowerTrench SyncFET⑩ |
| FDS6690 | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6690AS | 30V N-Channel PowerTrench SyncFET |
| FDS6690AS_NL | 30V N-Channel PowerTrench SyncFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6690 | 功能描述:MOSFET USE 512-FDS6690A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6690A | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6690A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6690A_NL | 制造商:Fairchild 功能描述:30V N-CH,FET,12.5MO,SO8 |
| FDS6690A_Q | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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