- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375783 > FDS6690A (FAIRCHILD SEMICONDUCTOR CORP) Single N-Channel, Logic Level, PowerTrenchTM MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDS6690A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 247K |
| 代理商： | FDS6690A |
April 1999
FDS6690A
Single N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
This N-Channel Logic Level MOSFET is
produced
using
Fairchild
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
Features
11 A, 30 V. R
DS(ON)
= 0.0125
@ V
GS
= 10 V,
R
DS(ON)
= 0.017
@ V
GS
= 4.5 V.
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
11
A
- Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
FDS6690A Rev.C1
Fast switching speed.
Low gate charge.
High performance trench technology for
extremely low R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Semiconductor's
1
6
7
8
2
4
3
5
S
D
S
S
SO-8
D
FDS
6690A
D
D
G
pin
1
1998 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6690S | 30V N-Channel PowerTrench SyncFET⑩ |
| FDS6690 | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6690AS | 30V N-Channel PowerTrench SyncFET |
| FDS6690AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDS6692 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6690A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6690A_NL | 制造商:Fairchild 功能描述:30V N-CH,FET,12.5MO,SO8 |
| FDS6690A_Q | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6690A-CUT TAPE | 制造商:FAIRCHILD 功能描述:.. |
| FDS6690AS | 功能描述:MOSFET 30V NCH POWER TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。