參數(shù)資料
型號： FDS6688
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 16000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 1/5頁
文件大?。?/td> 141K
代理商： FDS6688
December 2001
FDS6688
30V N-Channel PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDS6688 Rev C(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“l(fā)ow side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Features
16 A, 30 V.
R
DS(ON)
= 6 m
@ V
GS
= 10 V
R
DS(ON)
= 7 m
@ V
GS
= 4.5 V
Ultra-low gate charge (40 nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
D
S
SO-8
D
D
G
D
DD
SSS
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
16
16
50
2.5
1.4
1.2
–55 to +175
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6688
FDS6688
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料
PDF描述
FDS6689S 30V N-Channel PowerTrench SyncFET
FDS6690A Single N-Channel, Logic Level, PowerTrenchTM MOSFET
FDS6690S 30V N-Channel PowerTrench SyncFET⑩
FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6690AS 30V N-Channel PowerTrench SyncFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6688_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDS6688_Q 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6688AS 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6688S 功能描述:MOSFET 30V N-Channel PT SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6689S 功能描述:MOSFET 30V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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