參數(shù)資料
型號(hào): FDS2572
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET
中文描述: 4.9 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SO-8
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 273K
代理商: FDS2572
2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001
F
SABER Electrical Model
REV August 2001
template FDS2572 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=4e-11,nl=1.131,rs=4.4e-3,trs1=2e-3,trs2=1e-6,cjo=1.44e-9,m=0.67,tt=7.4e-8,xti=4.2)
dp..model dbreakmod = (rs=0.38,trs1=2e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=5e-10,isl=10e-30,nl=10,m=0.7)
m..model mstrongmod = (type=_n,vto=4.05,kp=85,is=1e-30, tox=1)
m..model mmedmod = (type=_n,vto=3.35,kp=5,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.76,kp=0.05,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-10,voff=-2)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2,voff=-10)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.8,voff=0.3)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.8)
c.ca n12 n8 = 8e-10
c.cb n15 n14 = 8e-10
c.cin n6 n8 = 2e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 157.4
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 5.61e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 1.98e-9
res.rlgate n1 n9 = 56.1
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 19.8
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.1e-3,tc2=-3e-7
res.rdrain n50 n16 = 2.1e-2, tc1=1e-2,tc2=3e-5
res.rgate n9 n20 = 1.47
res.rslc1 n5 n51 = 1e-6, tc1=3e-3,tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.5e-2, tc1=4.5e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-3e-3,tc2=-1.4e-5
res.rvtemp n18 n19 = 1, tc1=-5e-3,tc2=2e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/65))** 3))
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
14
13
S2B
CA
CB
EGS
EDS
14
8
13
8
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
D2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
相關(guān)PDF資料
PDF描述
FDS2582 12 AMP MINIATURE POWER RELAY
FDS2670 200V N-Channel PowerTrench MOSFET
FDS2672 N-Channel UltraFET Trench㈢ MOSFET 200V, 3.9A, 70mз
FDS2734 N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm
FDS3170N7 100V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS2572 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
FDS2572_Q 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS2582 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS2582 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
FDS2582_Q 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube