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參數(shù)資料
| 型號： | FDS2672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench㈢ MOSFET 200V, 3.9A, 70mз |
| 中文描述： | 3.9 A, 200 V, 0.148 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SO-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 360K |
| 代理商： | FDS2672 |
F
2006 Fairchild Semiconductor Corporation
FDS2672 Rev. B
www.fairchildsemi.com
1
tm
August 2006
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
200
±20
3.9
50
37.5
2.5
1.0
-55 to 150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
Operating and Storage Temperature
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case (Note 1)
25
°
C/W
Thermal Resistance, Junction to Ambient (Note 1a)
50
Thermal Resistance, Junction to Ambient (Note 1b)
125
Device Marking
FDS2672
Device
FDS2672
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
FDS2672
N-Channel UltraFET Trench
MOSFET
200V, 3.9A, 70m
Features
Max r
DS(on)
=
70m
at V
GS
= 10V, I
D
= 3.9A
Max r
DS(on)
=
80m
at V
GS
= 6V, I
D
= 3.5A
Fast switching speed
High performance trench technology for extremely low
r
DS(on)
RoHS compliant
General Description
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
DC-DC conversion
Pin 1
SO-8
4
3
2
1
5
6
7
8
D
D
D
D
G
S
S
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS2672 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET |
| FDS2672_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET |
| FDS2672_F085 | 功能描述:MOSFET 200V3.9A 70OHMNCH ULTRAFET TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2734 | 功能描述:MOSFET 250V 3.0A 117 OHM NCH ULTRAFE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS30 | 制造商:Hubbell Wiring Device-Kellems 功能描述:FUSED DISCO SW, 3P, 30A |
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