參數(shù)資料
型號(hào)： FDS2734
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm
中文描述： 3 A, 250 V, 0.225 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SO-8
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 375K
代理商： FDS2734
tm
August 2006
F
2006 Fairchild Semiconductor Corporation
FDS2734 Rev. B
www.fairchildsemi.com
1
Pin 1
SO-
8
FDS2734
N-Channel UItraFET Trench
MOSFET
250V, 3.0A, 117m
Features
Max r
DS(on)
=117m
at V
GS
=10V, I
D
= 3.0A
Max r
DS(on)
=126m
at V
GS
= 6V, I
D
= 2.8A
Fast switching speed
High performance trench technology for extremely
low r
DS(on)
High power and current handling capability
RoHS compliant
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
DC-DC conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
250
±
20
3.0
50
12.5
2.5
1.0
-55 to 150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power dissipation (Note 1a)
Power dissipation (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
o
C
R
θ
JA
R
θ
JA
R
θ
JC
Thermal Resistance, Junction- to -Ambient (Note 1a)
Thermal Resistance, Junction- to- Ambient (Note 1b)
Thermal Resistance, Junction -to- Case (Note 1)
50
125
25
o
C/W
Device Marking
FDS2734
Device
FDS2734
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
4
3
2
1
5
6
7
8
D
D
D
D
G
S
S
S
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