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參數(shù)資料
| 型號： | FDS2572 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET |
| 中文描述： | 4.9 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 273K |
| 代理商： | FDS2572 |
2001 Fairchild Semiconductor Corporation
October 2001
FDS2572 Rev. B, October 2001
F
D
D
S
SO-8
D
D
G
D
DD
SSS
G
Pin 1
SO-8
FDS2572
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET
Trench MOSFET
General Description
UltraFET
devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for Rds(on), low ESR, low total and Miller gate
charge, these devices are ideal for high frequency DC to
DC converters.
Applications
DC/DC converters
Telecom and Data-Com Distributed Power Architectures
48-volt I/P Half-Bridge/Full-Bridge
24-volt Forward and Push-Pull topologies
Features
R
DS(ON)
= 0.040
(Typ.), V
GS
=
10V
Q
g(TOT)
= 29nC (Typ.), V
GS
=
10V
Low Q
RR
Body Diode
Maximized efficiency at high frequencies
UIS Rated
MOSFET Maximum Ratings
T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
150
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
C
= 100
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
4.9
3.1
A
A
A
W
Figure 4
2.5
20
-55 to 150
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case
(NOTE1)
Thermal Resistance Junction to Case at 10 seconds
(NOTE2)
Thermal Resistance Junction to Case at steady state
(NOTE2)
25
50
85
o
C/W
o
C/W
o
C/W
Device Marking
FDS2572
Device
FDS2572
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
4
3
2
1
5
6
7
8
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2572_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2582 | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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