- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375781 > FDS2572 (FAIRCHILD SEMICONDUCTOR CORP) 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDS2572 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET |
| 中文描述： | 4.9 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 273K |
| 代理商： | FDS2572 |
2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
r
DS(ON)
r
DS(ON)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Q
gs2
Gate Charge Threshold to Plateau
Switching Characteristics
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal referance is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
2. R
θ
JA
is measured with 1.0in
2
copper on FR-4 board
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 120V
V
GS
= 0V
V
GS
=
±
20V
150
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
Drain to Source On Resistance
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 4.9A, V
GS
= 10V
I
D
= 4.9A, V
GS
= 6V
2
-
-
-
4
V
0.040
0.044
0.047
0.053
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
2050
220
48
29
4
8
6
4
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 75V
I
D
= 4.9A
I
g
= 1.0mA
38
6
-
-
-
V
DD
= 75V, I
D
= 4.9A
V
GS
= 10V, R
G
= 10
-
-
-
-
-
-
-
27
-
-
-
-
100
ns
ns
ns
ns
ns
ns
14
4
44
22
-
V
SD
Source to Drain Diode Voltage
I
SD
= 4.9A
I
SD
= 3.1A
I
SD
= 4.9A, dI
SD
/dt =100A/
μ
s
I
SD
= 4.9, dI
SD
/dt =100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
72
158
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相關PDF資料 |
PDF描述 |
|---|---|
| FDS2582 | 12 AMP MINIATURE POWER RELAY |
| FDS2670 | 200V N-Channel PowerTrench MOSFET |
| FDS2672 | N-Channel UltraFET Trench㈢ MOSFET 200V, 3.9A, 70mз |
| FDS2734 | N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm |
| FDS3170N7 | 100V N-Channel PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2572_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2582 | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。