參數(shù)資料
型號(hào): FDMJ1023PZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Dual P-Channel PowerTrench㈢ MOSFET
中文描述: 2.9 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, SC-75, MICROFET-6
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 257K
代理商: FDMJ1023PZ
F
2007 Fairchild Semiconductor Corporation
FDMJ1023PZ Rev.B
www.fairchildsemi.com
6
Dimensional Outline and Pad Layout
相關(guān)PDF資料
PDF描述
FDMS2380 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A)
FDMS2572_07 N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
FDMS2572 N-Channel UltraFET Trench MOSFET
FDMS2672 N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm
FDMS2734 N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMJ1027P 功能描述:MOSFET -20V -2.4A PCH 1.8V SPECIF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMJ1028N 功能描述:MOSFET MLP 20V 3.2A 2.5 VGS NCH S RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMJ1032C 功能描述:MOSFET 20V Dual N&P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDML7610AS 制造商:Fairchild Semiconductor Corporation 功能描述:
FDML7610S 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube