參數(shù)資料
型號(hào)： FDMS2734
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm
中文描述： 2.8 A, 250 V, 0.122 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, MO-229, POWER 56, 8 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 512K
代理商： FDMS2734
tm
February 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMS2734 Rev.C
www.fairchildsemi.com
1
FDMS2734
N-Channel UltraFET Trench
MOSFET
250V, 14A, 122m
Features
Max r
DS(on)
= 122m
at V
GS
= 10V, I
D
= 2.8A
Max r
DS(on)
= 130m
at V
GS
= 6V, I
D
= 1.7A
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
General Description
UItraFET
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
devices combine characteristics that enable
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
250
±20
14
2.8
16
78
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
1.6
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
50
Device Marking
FDMS2734
Device
FDMS2734
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D
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FDMS3016DC 功能描述:MOSFET 30V N-Channel Dual Cool PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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