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參數(shù)資料
| 型號： | FDMS2572_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
| 中文描述： | N溝道UltraFET海溝㈢MOSFET的為150V，27A條，47mз |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 517K |
| 代理商： | FDMS2572_07 |
tm
February 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMS2572 Rev.C2
www.fairchildsemi.com
1
FDMS2572
N-Channel UltraFET Trench
MOSFET
150V, 27A, 47m
Features
Max r
DS(on)
= 47m
at V
GS
= 10V, I
D
= 4.5A
Max r
DS(on)
= 53m
at V
GS
= 6V, I
D
= 4.5A
Low Miller Charge
Optimized efficiency at high frequencies
UIS Capability (Single pulse and Repetitive pulse)
RoHS Compliant
General Description
UItraFET
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
devices combine characteristics that enable
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
150
±20
27
27
4.5
30
78
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
1.6
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
50
Device Marking
FDMS2572
Device
FDMS2572
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMS2572 | N-Channel UltraFET Trench MOSFET |
| FDMS2672 | N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm |
| FDMS2734 | N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm |
| FDMS3572_07 | N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз |
| FDMS3572 | N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mOHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS2672 | 功能描述:MOSFET 200V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS2672_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 200V, 20A, 77m |
| FDMS2734 | 功能描述:MOSFET 250V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3006SDC | 功能描述:MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3008SDC | 功能描述:MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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