參數(shù)資料
型號(hào)： FDMJ1023PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual P-Channel PowerTrench㈢ MOSFET
中文描述： 2.9 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, SC-75, MICROFET-6
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 257K
代理商： FDMJ1023PZ
F
2007 Fairchild Semiconductor Corporation
FDMJ1023PZ Rev.B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
3
6
9
12
V
GS
= -4.5V
V
GS
= -3V
V
GS
=
-1.8V
V
GS
=
-2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= -2V
V
GS
= -1.5V
-
D
,
D
-V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
3
-I
D
,
DRAIN CURRENT(A)
6
9
12
0.5
1.0
1.5
2.0
2.5
V
GS
= -1.8V
V
GS
=
-3V
V
GS
=
-1.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
V
GS
=
-2.5V
V
GS
= -2V
V
GS
=
-4.5V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -2.9A
V
GS
= -4.5V
N
Figure 4.
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
100
200
300
400
500
-V
GS
,
GATE TO SOURCE VOLTAGE (V)
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -2.9A
r
D
D
S
(
m
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0
1
2
3
0
3
6
9
12
V
DD
= -3V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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