參數(shù)資料
型號： FDMJ1023PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual P-Channel PowerTrench㈢ MOSFET
中文描述： 2.9 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, SC-75, MICROFET-6
文件頁數(shù)： 1/7頁
文件大?。?/td> 257K
代理商： FDMJ1023PZ
tm
August 2007
F
2007 Fairchild Semiconductor Corporation
FDMJ1023PZ Rev.B
www.fairchildsemi.com
1
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Q1
Q2
G1
S2
S1
S1
G2
S2
S1
S2
G2
S2
S1
G1
D2
D1
Pin 1
SC-75 MicroFET
FDMJ1023PZ
Dual P-Channel PowerTrench
MOSFET
–20V, –2.9A, 112m
Features
Max r
DS(on)
= 112m
at V
GS
= –4.5V, I
D
= –2.9A
Max r
DS(on)
= 160m
at V
GS
= –2.5V, I
D
= –2.4A
Max r
DS(on)
= 210m
at V
GS
= –1.8V, I
D
= –2.1A
Max r
DS(on)
= 300m
at V
GS
= –1.5V, I
D
= –1.0A
Low gate charge, high power and current handling capability
HBM ESD protection level > 1.5kV typical (Note 3)
RoHS Compliant
General Description
This dual P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench
process. This device is designed
specifically as a single package solution for the battery charge
switch in cellular handset and other ultra-portable applications. It
features two independent P-Channel MOSFETs with low
on-state resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible. The SC-75 MicroFET
package offers exceptional thermal performance for its physical
size and is well suited to linear mode applications.
Applications
Battery management/charger application
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
–20
±8
–2.9
–12
1.4
0.7
–55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
89
182
°C/W
Device Marking
023
Device
FDMJ1023PZ
Package
SC-75 MicroFET
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMJ1027P 功能描述:MOSFET -20V -2.4A PCH 1.8V SPECIF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMJ1028N 功能描述:MOSFET MLP 20V 3.2A 2.5 VGS NCH S RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMJ1032C 功能描述:MOSFET 20V Dual N&P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDML7610AS 制造商:Fairchild Semiconductor Corporation 功能描述:
FDML7610S 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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