型號: | FDMJ1023PZ |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | 小信號晶體管 |
英文描述: | Dual P-Channel PowerTrench㈢ MOSFET |
中文描述: | 2.9 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
封裝: | ROHS COMPLIANT, SC-75, MICROFET-6 |
文件頁數(shù): | 5/7頁 |
文件大?。?/td> | 257K |
代理商: | FDMJ1023PZ |
相關(guān)PDF資料 |
PDF描述 |
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FDMS2380 | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A) |
FDMS2572_07 | N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
FDMS2572 | N-Channel UltraFET Trench MOSFET |
FDMS2672 | N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm |
FDMS2734 | N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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FDMJ1027P | 功能描述:MOSFET -20V -2.4A PCH 1.8V SPECIF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FDMJ1028N | 功能描述:MOSFET MLP 20V 3.2A 2.5 VGS NCH S RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FDMJ1032C | 功能描述:MOSFET 20V Dual N&P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FDML7610AS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
FDML7610S | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |