參數(shù)資料
型號： FDMC5614P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel PowerTrench MOSFET
中文描述： 5.7 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
文件頁數(shù)： 3/7頁
文件大?。?/td> 299K
代理商： FDMC5614P
F
FDMC5614P Rev. B
www.fairchildsemi.com
3
Typical Characteristics
Figure 1.
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
=
-10V
PULSE
DURATION
=
300us
DUTY CYCLE = 2.0%MAX
-6V
-3.5V
-5.0V
-4.5V
-2.5V
-3.0V
On Region Characteristics
Figure 2.
0.8
1
1.2
1.4
1.6
1.8
2
1
5
9
13
17
21
25
-I
D
, DRAIN CURRENT (A)
D
-3.0V
PULSE DURATION = 300us
DUTY CYCLE = 2.0%MAX
-3.5V
-4.0V
-4.5V
-6.0V
V
GS
=
-10V
On Resistance vs Drain Current and
Gate Voltage
Figure 3.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J
,
JUNCTION TEMPERATURE (
o
C)
I
D
= -5.7A
V
GS
= -10V
Normalized On Resistance vs Junction
Temperature
Figure 4.
40
100
160
220
280
340
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
r
D
,
R
I
D
= -5.7A
T
J
= 125
o
C
T
J
= 25
o
C
PULSE DURATION = 300us
DUTY CYCLE = 2.0%MAX
Figure 5. Transfer Characteristics
0
5
10
15
20
25
30
0
2
4
6
8
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
J
= -55
o
C
25
o
C
125
o
C
PULSE DURATION = 300us
DUTY CYCLE = 2.0%MAX
Figure 6.
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
J
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Source to Drain Diode Forward Voltage
vs Source Current
相關PDF資料
PDF描述
FDMC6890NZ 30V N-Channel PowerTrench MOSFET
FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm
FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mohm
FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm
FDMF6700 Driver plus FET Multi-chip Module
相關代理商/技術參數(shù)
參數(shù)描述
FDMC612PZ 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 20V 8-MLP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET -20V P-Channel PowerTrench MOSFET
FDMC6296 功能描述:MOSFET 30V Sngl NCh Lgc Lvl PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC6675BZ 功能描述:MOSFET -30V 20A P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC6675BZ_F125 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC6675BZ_F126 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*