參數(shù)資料
型號(hào)： FDMC5614P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel PowerTrench MOSFET
中文描述： 5.7 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 299K
代理商： FDMC5614P
F
FDMC5614P Rev. B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
B
VDSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
V
GS
= 0V, I
D
= -250
μ
A
I
D
= -250
μ
A, referenced to
25°C
V
DS
= -48V, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
-60
V
-54
mV/°
C
-1
μ
A
nA
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, referenced to
25°C
V
GS
= -10V, I
D
= -5.7A
V
GS
= -4.5V, I
D
= -4.4A
V
GS
= -10V, I
D
= -5.7A
T
J
= 125°C
V
DS
= -15V, I
D
= -5.7A
-1
-1.95
-3
V
4.7
mV/°C
r
DS(on)
Static Drain-Source On-Resistance
84
108
100
135
m
140
168
g
FS
Forward Transconductance
11
S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
792
137
57
1055
185
90
pF
pF
pF
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -30V, I
D
= -1A
V
GS
= -10V, R
GEN
= 6
10.3
11.3
32.2
11.0
15.3
1.6
2.7
21
23
65
22
20
2.1
3.5
ns
ns
ns
ns
nC
nC
nC
V
DS
= -30V, I
D
= -5.7A,
V
GS
= -10V
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0V, I
S
=-3.2A
-0.82
-1.2
36
29
V
ns
nC
I
F
= -3.2A, di/dt=100A/
μ
s
(Note 2)
Notes:
1:
R
is determined with the device mounted on a 1in
2
oz.copper pad on a 1.5x1.5 in board of FR-4 material .R
θ
JC
are guaranteed by design
while R
θ
JA
is determined by the user’s board design.
2:
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
b.
108°C/W when mounted on
a minimum pad of 2 oz copper
a.
52°C/W when mounted on
a 1 in
pad of 2 oz, 24°C/W
when power time = 10sec.
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