參數(shù)資料
型號(hào)： FDMC2610_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ
中文描述： N溝道UltraFET海溝㈢MOSFET的為200V，9.5A，200米ヘ
文件頁(yè)數(shù)： 3/7頁(yè)
文件大小： 347K
代理商： FDMC2610_07
F
M
FDMC2610 Rev.C
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
0
5
10
15
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
4.5V
V
GS
= 7V
V
GS
= 5V
V
GS
= 6V
V
GS
=
10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
3
6
9
12
15
0.8
1.0
1.2
1.4
1.6
1.8
V
GS
=
4.5V
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 7V
V
GS
=
6V
V
GS
=
5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
=2.2A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
7
8
9
10
100
200
300
400
500
600
T
A
= 25
o
C
T
A
= 150
o
C
I
D
= 1.4A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
r
D
,
S
(
m
Ω
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
2
3
4
5
6
0
3
6
9
12
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
20
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FDMC2610 N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC2674 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC2674 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDMC2674_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
FDMC2674_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m??
FDMC3020DC 功能描述:MOSFET 30V NChan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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