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參數(shù)資料
| 型號： | FDMC2523P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel QFET -150V, -3A, 1.5ohm |
| 中文描述： | 3 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, ROHS COMPLIANT PACKAGE-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 181K |
| 代理商： | FDMC2523P |
F
FDMC2523P Rev. B
1
www.fairchildsemi.com
4
Figure 7.
0
1
2
3
4
5
6
7
0
2
4
6
8
10
V
DD
= -100V
V
DD
= -50V
-
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= -75V
Gate Charge Characteristics
Figure 8.
0
25
50
75
100
125
150
1
10
100
f = 1MHz
V
GS
= 0V
C
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain to Source Voltage
Figure 9. Unclamped Inductive Switching
Capability
10
0
10
1
10
2
10
3
10
4
10
5
10
6
1
4
0.2
T
J
= 125
o
C
T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE(ms)
Figure 10.
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
= -10V
-
D
,
T
A
, AMBIENT TEMPERATURE
(
o
C
)
R
T
JA
= 52
o
C/W
Maximum Continuous Drain Current vs
Ambient Temperature
Figure 11.
1
1E-3
0.01
0.1
1
10
10us
10ms
100ms
DC
1s
10s
1ms
100us
V
GS =
-10V
SINGLE PULSE
R
T
JA
= 108
o
C
/W
T
C =
25
o
C
-V
DS
,
DRAIN-SOURCE VOLTAGE (V)
I
D
,
r
DS(ON)
LIMIT
500
50
Forward Bias Safe Operating Area
Figure 12. Single
SINGLE PULSE
R
T
JA
= 108
o
C/W
T
A
= 25
o
C/W
1E-3
0.01
0.1
1
10
100
1000
1
10
100
P
(
P
)
,
t, PULSE WIDTH (s)
500
SINGLE PULSE
R
T
JA
=
108
o
C/W
T
= 25
C
Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDMC2523P_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel QFET -150V, -3A, 1.5ヘ |
| FDMC2523P_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel QFET?? -150V, -3A, 1.5?? |
| FDMC2610 | 功能描述:MOSFET 200V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 9.5A POWER33-8 |
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