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參數(shù)資料
| 型號： | FDMC2523P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel QFET -150V, -3A, 1.5ohm |
| 中文描述： | 3 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, ROHS COMPLIANT PACKAGE-8 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 181K |
| 代理商： | FDMC2523P |
F
FDMC2523P Rev. B
1
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= -8V
V
GS
= -9V
V
GS
= -6V
V
GS
= -7V
V
GS
= -10V
PULSE DURATION = 300
P
s
DUTY CYCLE = 0.2%MAX
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
On Region Characteristics
Figure 2. Normalized
Current and Gate Voltage
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.8
1.0
1.2
1.4
1.6
V
GS
= -9V
V
GS
= -8V
V
GS
= -10V
V
GS
= -7V
PULSE DURATION = 300
P
s
DUTY CYCLE = 0.2%MAX
V
GS
= -6V
-I
D
, DRAIN CURRENT(A)
N
D
On-Resistance vs Drain
Figure 3.
-60
-30
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
30
60
90
120
150
0.3
0.6
0.9
1.2
1.5
1.8
2.1
I
D
= -3A
V
GS
= -10V
N
Normalized On Resistance vs Junction
Temperature
Figure 4.
5
6
7
8
9
10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
PULSE DURATION = 300
P
s
DUTY CYCLE = 0.2%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -0.75A
r
D
,
S
(
:
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 300
P
s
DUTY CYCLE = 0.2%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.5
1.0
1.5
2.0
2.5
1E-4
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDMC2523P_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel QFET -150V, -3A, 1.5ヘ |
| FDMC2523P_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel QFET?? -150V, -3A, 1.5?? |
| FDMC2610 | 功能描述:MOSFET 200V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 9.5A POWER33-8 |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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