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參數(shù)資料
| 型號： | FDMC2523P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel QFET -150V, -3A, 1.5ohm |
| 中文描述： | 3 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, ROHS COMPLIANT PACKAGE-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 181K |
| 代理商： | FDMC2523P |
F
FDMC2523P Rev. B
1
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
'
BV
DSS
'
T
J
Drain to Source Breakdown Voltage
I
D
= -250
P
A, V
GS
= 0V
-150
V
Breakdown Voltage Temperature
Coefficient
I
D
= -250
P
A, referenced to 25°C
-138
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -150V, V
GS
= 0V
-1
P
A
T
J
= 125°C
-10
I
GSS
Gate to Source Leakage Current
V
GS
= ±30V, V
DS
= 0V
±100
nA
On Characteristics
V
GS(th)
'
V
GS(th)
'
T
J
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= -250
P
A
-3
-3.8
-5
V
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= -250
P
A, referenced to 25°C
6
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= -10V, I
D
= -1.5A
V
GS
= -10V, I
D
= -1.5A,T
J
= 125°C
V
DS
= -40V, I
D
= -1.5A ( Note 4)
1.1
1.5
:
2.0
3.6
g
FS
Forward Transconductance
1.4
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
200
270
pF
Output Capacitance
60
80
pF
Reverse Transfer Capacitance
10
15
pF
:
Gate Resistance
f = 1MHz
7.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Turn-On Delay Time
V
DD
= -75V, I
D
= -3A
V
= -10V, R
= 25
:
(Note 3,4)
15
27
ns
Rise Time
11
20
ns
Turn-Off Delay Time
19
35
ns
Fall Time
13
24
ns
Total Gate Charge
V
DS
= -75V, I
D
= -3A
V
= -10V
(Note 3,4)
6.2
9
nC
Gate to Source Gate Charge
1.4
nC
Q
gd
Gate to Drain “Miller”Charge
3.3
nC
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1:
R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
T
JC
is guaranteed by design while R
T
CA
is determined by the user’s board design.
Maximum Continuous Drain -Source Diode Forward Current
-3
A
Maximum Pulse Drain -Sourse Diode Forward Current
-12
A
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
=-3A
I
F
= -3A, di/dt = 100A/
P
s
(Note 3)
-1.8
-5
V
Reverse Recovery Time
93
ns
Reverse Recovery Charge
0.27
nC
2:
I
-3 A, dl/dt
300A/us, V
BV
, Starting T
J
= 25 °C
3:
Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
4:
Essentially independent of operating temperature.
a)
52°C/W when mounted on
a 1 in
pad of 2 oz copper
b)
108°C/W when mounted
on a minimum pad of 2 oz
coppeer.
Scale 1:1 on letter size paper
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| FDMC2523P_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel QFET -150V, -3A, 1.5ヘ |
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