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參數(shù)資料
| 型號： | FDMA530PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Single P-Channel PowerTrench MOSFET -30V, -6.8A, 35mohm |
| 中文描述： | 6.8 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 6 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 236K |
| 代理商： | FDMA530PZ |
F
M
FDMA530PZ Rev.B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
4
8
12
16
20
24
V
GS
= - 4.0V
V
GS
= -
3.5V
V
GS
= - 4.5V
V
GS
=
-10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= - 5.0V
-
I
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
4
8
12
16
20
24
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
= -5.0V
V
GS
= -4.0V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= -6.8A
V
GS
= -10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
2
4
6
8
10
0
50
100
150
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -3.4A
r
D
,
S
(
m
Ω
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
5
6
0
6
12
18
24
V
DD
= -5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
I
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.4
0.8
1.2
1.6
0.0001
0.001
0.01
0.1
1
10
30
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDMA530PZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel PowerTrench㈢ MOSFET |
| FDMA6023PZT | 功能描述:MOSFET Dual P-Ch, -20V PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA7628 | 功能描述:MOSFET Snlg PT4, N 20/8V in MLP 2.05x2.05 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA7630 | 功能描述:MOSFET 30V Single N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA7632 | 功能描述:MOSFET 30V Single N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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