參數(shù)資料
型號(hào)： FDMA530PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Single P-Channel PowerTrench MOSFET -30V, -6.8A, 35mohm
中文描述： 6.8 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, 6 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 236K
代理商： FDMA530PZ
tm
January 2007
F
M
2006 Fairchild Semiconductor Corporation
FDMA530PZ Rev.B
www.fairchildsemi.com
1
FDMA530PZ
Single P-Channel PowerTrench
MOSFET
–30V, –6.8A, 35m
Ω
Features
Max r
DS(on)
= 35m
Ω
at V
GS
= –10V, I
D
= –6.8A
Max r
DS(on)
= 65m
Ω
at V
GS
= –4.5V, I
D
= –5.0A
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
RoHS Compliant
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications . It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
–30
±25
–6.8
–24
2.4
0.9
–55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
52
145
°C/W
Device Marking
530
Device
FDMA530PZ
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
5
1
6
2
3
4
D
D
S
D
D
G
Bottom Drain Contact
D
D
S
G
D
D
Pin 1
Drain
Source
MicroFET 2X2 (Bottom View)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMA530PZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel PowerTrench㈢ MOSFET
FDMA6023PZT 功能描述:MOSFET Dual P-Ch, -20V PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMA7628 功能描述:MOSFET Snlg PT4, N 20/8V in MLP 2.05x2.05 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMA7630 功能描述:MOSFET 30V Single N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMA7632 功能描述:MOSFET 30V Single N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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