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參數(shù)資料
| 型號(hào)： | FDM606P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Logic Level Power Trench MOSFET |
| 中文描述： | 6.8 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MICROFET-10 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | FDM606P |
2001 Fairchild Semiconductor Corporation
FDM606P Rev. C,
F
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic
(Continued) T
A
= 25°C unless otherwise noted
0
4
8
12
16
20
1.0
1.5
2.0
2.5
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
4
8
12
16
20
0
0.5
1.0
1.5
2.0
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -2V
T
A
= 25
o
C
V
GS
= -4.5V
V
GS
= -1.8V
20
30
40
50
1
2
3
4
5
6
60
I
D
= -1A
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -6.8A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.75
1.00
1.25
1.50
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= -4.5V, I
D
= -6.8A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.50
0.75
1.00
1.25
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.90
0.95
1.00
1.05
1.10
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDM606P_Q | 功能描述:MOSFET P-Ch Power Trench Logic Level 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDM6296 | 功能描述:MOSFET N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDM6296_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel Logic-Level PowerTrench㈢ MOSFET 30V,11.5A, 10.5mヘ |
| FDM70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC |
| FDM7030BL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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