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參數(shù)資料
| 型號(hào)： | FDM606P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Logic Level Power Trench MOSFET |
| 中文描述： | 6.8 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MICROFET-10 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | FDM606P |
2002 Fairchild Semiconductor Corporation
July 2002
FDM606P Rev. C
F
FDM606P
P-Channel 1.8V Logic Level Power Trench
MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
Applications
Load switch
Battery charge
Battery disconnect circuits
Features
Fast switching
r
DS(ON)
= 0.026
(Typ), V
GS
= -4.5V
r
DS(ON)
= 0.033
(Typ), V
GS
= -2.5V
r
DS(ON)
= 0.052
(Typ), V
GS
= -1.8V
MOSFET Maximum Ratings
T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
-20
±
8
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= - 4.5V)
Continuous (T
C
= 100
o
C, V
GS
= - 2.5V)
Continuous (T
C
= 100
o
C, V
GS
= -1.8V)
Pulsed
Power dissipation
Derate above 25°C
Operating and Storage Temperature
I
D
-6.8
-3.8
-3.0
A
A
A
Figure 4
1.92
15.4
-55 to 150
P
D
W
mW/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case (Note1)
Thermal Resistance Junction to Ambient (Note 2)
6.0
65
o
C/W
o
C/W
Device Marking
.06P
Device
FDM606P
Package
MicroFET3x2
Reel Size
178 mm
Tape Width
8 mm
Quantity
3000
ShortPin
SinglePad
Bottomview 3 X 2 (8 Lead)
1
D
S
MicroFET 3x2-8
1
2
3
4
8
7
6
5
S
D
D
D
D
D
D
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDM606P_Q | 功能描述:MOSFET P-Ch Power Trench Logic Level 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDM6296 | 功能描述:MOSFET N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDM6296_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel Logic-Level PowerTrench㈢ MOSFET 30V,11.5A, 10.5mヘ |
| FDM70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC |
| FDM7030BL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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