參數(shù)資料
型號(hào): FDM6296
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: CAP CER 47000PF 100V Y5V 1206
中文描述: 11.5 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 3.30 X 3.30 MM, LEAD FREE, MLP-8
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 471K
代理商: FDM6296
2004 Fairchild Semiconductor Corporation
FDM6296 Rev. D
1
www.fairchildsemi.com
December 2004
F
FDM6296
Single N-Channel, Logic-Level, PowerTrench
MOSFET
Features
11.5 A, 30 V R
DS(ON)
DS(ON)
= 10.5 m
= 15 m
@ V
@ V
GS
= 4.5 V
= 10 V
R
GS
Low Qg, Qgd and Rg for efficient switching performance
Low Profile – MicroFET 3.3 x 3.3 mm
Applications
Point of Load Converter
1/16 Brick Synchronous Rectifier
General Description
This single N-Channel MOSFET in the thermally efficient Micro-
FET package has been specifically designed to perform well in
Point of Load converters. Providing an optimized balance
between Rds(on) and gate charge this device can be effectively
used as a “high side” control switch or “l(fā)ow side” synchronous
rectifier.
MicroFET
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
I
D
Gate-Source Voltage
±20
V
Drain Current
– Continuous
(Note 1a)
11.5
A
– Pulsed
40
P
D
Power Dissipation (Steady State)
(Note 1a)
2.5
W
(Note 1b)
1.2
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°C
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
52
°C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
108
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
5
Device Marking
Device
Reel Size
Tape width
Quantity
6296
FDM6296
7’’
12mm
3000 units
8
Bottom
7
6
5
1
2
3
4
Top
4
3
2
1
5
6
7
8
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