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參數(shù)資料
| 型號： | FDM606P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Logic Level Power Trench MOSFET |
| 中文描述： | 6.8 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MICROFET-10 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | FDM606P |
2001 Fairchild Semiconductor Corporation
FDM606P Rev. C,
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at -4.5V
Q
g(-2.5)
Total Gate Charge at -2.5V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= -4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
t
rr
Reverse Recovery Time
Q
RR
Reverse Recovered Charge
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the center drain pad. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by user’s board design.
2.
R
θ
JA
is 65
o
C/W (steady state) when mounted on a 1 inch
2
copper pad on FR-4.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
D
= -250
μ
A, V
GS
= 0V
V
DS
= -16V
V
GS
= 0V
V
GS
=
±
8V
-20
-
-
-
-
-
-
-
-
V
I
DSS
Zero Gate Voltage Drain Current
-1
-5
μ
A
T
A
=100
o
C
I
GSS
Gate to Source Leakage Current
±
100
nA
V
GS
= V
DS
, I
D
= -250
μ
A
I
D
= -6.8A, V
GS
= -4.5V
I
D
= -3.8A, V
GS
= -2.5V
I
D
= -3.0A, V
GS
= -1.8V
-0.4
-
-
-
-0.9
0.026
0.033
0.052
-1.5
0.030
0.038
0.070
V
r
DS(ON)
Drain to Source On Resistance
V
DS
= -10V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
2200
350
160
20
12
3.0
3.8
-
-
-
pF
pF
pF
nC
nC
nC
nC
V
GS
= 0V to -4.5V
V
GS
= 0V to -2.5V
V
DD
= -10V
I
D
= -3.0A
I
g
= 1.0mA
30
18
-
-
V
DD
= -10V, I
D
= -3.0A
V
GS
= -4.5V, R
GS
= 6.8
-
-
-
-
-
-
-
9
81
-
-
-
-
308
ns
ns
ns
ns
ns
ns
46
134
71
-
I
SD
= -6.8A
I
SD
= -3.0A, dI
SD
/dt = 100A/
μ
s
I
SD
= -3.0A, dI
SD
/dt = 100A/
μ
s
-
-
-
-0.9
-
-
-1.2
28
20
V
ns
nC
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