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參數(shù)資料
| 型號(hào)： | FDMA1023PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel PowerTrench MOSFET -20V, -3.7A, 72mohm |
| 中文描述： | 3700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, ROHS COMPLIANT, MICROFET-6 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | FDMA1023PZ |
March 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMA1023PZ Rev.B
www.fairchildsemi.com
1
FDMA1023PZ
Dual P-Channel PowerTrench
MOSFET
–20V, –3.7A, 72m
Ω
Features
Max r
DS(on)
= 72m
Ω
at V
GS
= –4.5V, I
D
= –3.7A
Max r
DS(on)
= 95m
Ω
at V
GS
= –2.5V, I
D
= –3.2A
Max r
DS(on)
= 130m
Ω
at V
GS
= –1.8V, I
D
= –2.0A
Max r
DS(on)
= 195m
Ω
at V
GS
= –1.5V, I
D
= –1.0A
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
–20
±8
–3.7
–6
1.5
0.7
–55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
(Note 1a)
-Pulsed
Power Dissipation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance for Single Operation, Junction to Ambient (Note 1a)
Thermal Resistance for Single Operation, Junction to Ambient (Note 1b)
Thermal Resistance for Single Operation, Junction to Ambient (Note 1c)
Thermal Resistance for Single Operation, Junction to Ambient (Note 1d)
86
173
69
151
°C/W
Device Marking
023
Device
FDMA1023PZ
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
MicroFET 2X2
Pin 1
S1
G1
D2
D1
G2
S2
1
3
2
4
5
6
S1
G1
D2
D1
G2
S2
D1
D2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMA1023PZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1024NZ | 功能描述:MOSFET 20V Dual N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA1025P | 功能描述:MOSFET -20V Dual P-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA1025P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P | 功能描述:MOSFET MLP 2X2 DUAL PCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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