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參數資料
| 型號： | FDM3622 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 4.4 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, LEAD FREE, MLP-8 |
| 文件頁數： | 2/11頁 |
| 文件大小： | 231K |
| 代理商： | FDM3622 |
2005 Fairchild Semiconductor Corporation
FDM3622 Rev. A
www.fairchildsemi.com
F
N
2
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
R
G
Gate Resistance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Symbol
V
DSS
V
GS
Parameter
Ratings
100
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 52
o
C/W)
Continuous (T
C
= 25
o
C, V
GS
= 6V, R
θ
JA
= 52
o
C/W)
Continuous (T
C
= 100
o
C, V
GS
= 10V, R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
4.4
3.8
2.8
A
A
A
mJ
W
Figure 4
190
2.4
19
-55 to 150
E
AS
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JA
R
θ
JA
R
θ
JC
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Ambient (Note 1b)
Thermal Resistance Junction to Case (Note 1)
52
108
1.8
o
C/W
o
C/W
o
C/W
Device Marking
FDM3622
Device
FDM3622
Package
MicroFET3.3x3.3
Reel Size
7”
Tape Width
12mm
Quantity
3000 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±
20V
100
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 100
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 4.4A, V
GS
= 10V
I
D
= 3.8A, V
GS
= 6V,
I
D
= 4.4A, V
GS
= 10V,
T
C
= 150
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.044
0.056
0.060
0.080
-
0.092
0.120
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
820
125
35
3.1
13
1.6
3.6
2.0
3.4
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 4.4A
I
g
= 1.0mA
17
2.1
-
-
-
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