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參數(shù)資料
| 型號： | FDG313N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Digital FET, N-Channel |
| 中文描述： | 950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 713K |
| 代理商： | FDG313N |
F
FDG313N Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.005
0.01
0.05
0.1
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R =260°C/W
T - T = P * R JA
P(pk)
t
1
t
2
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20 30
50
0.01
0.03
0.1
0.3
1
2
5
I
D
RDS(ON)LMT
V = 4.5V
SINGLE PULSE
R =260°C/W
T = 25°C
DC
1s
10ms
100ms
10s
1ms
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 0.95A
10V
15V
V = 5V
0.1
0.5
1
2
5
10
25
5
10
20
50
100
150
V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0V
C ss
C ss
0
0.0001
6
12
18
24
30
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 260
o
C/W
T
A
= 25
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG313N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N_D87Z | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG314P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG314P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG315 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench MOSFET |
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