- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375773 > FDG313N (FAIRCHILD SEMICONDUCTOR CORP) Digital FET, N-Channel PDF資料下載
參數(shù)資料
| 型號(hào)： | FDG313N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Digital FET, N-Channel |
| 中文描述： | 950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 713K |
| 代理商： | FDG313N |
F
FDG313N Rev. C
FDG313N
Digital FET, N-Channel
General Description
July 2000
1998 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
FDG313N
25
±
8
0.95
2
0.75
0.55
0.48
-55 to +150
6
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
P
D
(Note 1c)
T
J
, T
stg
ESD
Operating and Storage Junction Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
°
C
kV
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
260
°
C/W
Package Outlines and Ordering Information
Device Marking
.
13
Device
FDG313N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
This N-Channel enhancement mode field effect
transistor is produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. This device has been designed especially
for low voltage applications as a replacement for
bipolar digital transistor and small signal MOSFET.
Applications
Load switch
Battery protection
Power management
Features
0.95 A, 25 V. R
DS(on)
= 0.45
@ V
GS
= 4.5 V
R
DS(on)
= 0.60
@ V
GS
= 2.7 V.
Low gate charge (1.64 nC typical)
Very low level gate drive requirements allowing direct
operation in 3V circuits (V
GS(th)
< 1.5V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface mount
package.
SC70-6
D
S
DG
D
D
pin
1
3
5
6
4
1
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDG314P | Digital FET, P-Channel |
| FDG315 | N-Channel Logic Level PowerTrench MOSFET |
| FDG315N | CAP CER 100PF 630VDC U2J 1206 |
| FDG316P | CAP CER 1000PF 630VDC U2J 1206 |
| FDG326 | CAP CER 150PF 630VDC U2J 1206 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG313N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N_D87Z | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG314P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG314P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG315 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。