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參數(shù)資料
| 型號： | FDG315N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 100PF 630VDC U2J 1206 |
| 中文描述： | 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | FDG315N |
F
FDG315N Rev. C
FDG315N
N-Channel Logic Level PowerTrench
MOSFET
July 2000
2000 Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
30
±
20
2
6
0.75
0.48
V
V
A
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
W
P
D
(Note 1b)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°
C/W
Package Marking and Ordering Information
Device Marking
.
15
Device
FDG315N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
DC/DC converter
Load switch
Power Management
Features
2 A, 30 V. R
DS(ON)
= 0.12
@ V
GS
= 10 V
R
DS(ON)
= 0.16
@ V
GS
= 4.5 V.
Low gate charge (2.1nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
Compact industry standard SC70-6 surface mount
package.
SC70-6
D
S
DG
D
D
3
5
6
4
1
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDG316P | CAP CER 1000PF 630VDC U2J 1206 |
| FDG326 | CAP CER 150PF 630VDC U2J 1206 |
| FDG326P | CAP CER 220PF 630VDC U2J 1206 |
| FDG327NZ | CAP CER 680PF 630VDC U2J 1206 |
| FDG327N | CAP CER 330PF 630VDC U2J 1206 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG316P | 功能描述:MOSFET SC70-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG318P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG326 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDG326P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG326P_Q | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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