參數(shù)資料
型號： FDG313N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Digital FET, N-Channel
中文描述： 950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-70, 6 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 713K
代理商： FDG313N
F
FDG313N Rev. C
DMOS Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
25
V
30
mV/
°
C
V
DS
= 20 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
1
μ
A
nA
100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.65
0.8
-2
1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 4.5 V, I
D
= 0.5 A
V
GS
= 4.5 V, I
D
= 0.5 A @ 125
°
C
V
GS
= 2.7 V, I
D
= 0.2 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 0.5 A
0.35
0.53
0.45
0.45
0.76
0.6
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
0.5
A
S
1.5
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
50
28
9
pF
pF
pF
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
3
6
ns
ns
ns
ns
nC
nC
nC
8.5
17
13
1.64
0.38
0.45
18
30
25
2.3
V
DD
= 6 V, I
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
V
DS
= 5 V, I
D
= 0.95 A,
V
GS
= 4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
0.6
1.2
A
V
V
GS
= 0 V, I
S
= 0.6 A
(Note 2)
0.8
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 170
°
C/W when
mounted on a 1 in
2
pad of 2oz copper.
b) 225
°
C/W when
mounted on a half
of package sized 2oz.
copper.
c) 260
°
C/W when
mounted on a minimum
pad of 2oz copper.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG313N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDG313N_D87Z 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG314P 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG314P_Q 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG315 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench MOSFET
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