參數(shù)資料
型號： FDD5202P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel, Logic Level, MOSFET
中文描述： 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 3/5頁
文件大?。?/td> 59K
代理商： FDD5202P
F
FDD5202P, Rev. A
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2.3A
V
GS
= -10V
0
3
6
9
12
15
0
2
4
6
8
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-6V
-5.0V
-4.5V
-7.0V
V
GS
= -10V
-4.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
3
6
9
12
15
-I
D
, DIRAIN CURRENT (A)
R
D
,
D
V
GS
= -4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
0
0.2
0.4
0.6
0.8
3
4
5
6
7
8
9
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1.5A
T
A
= 125
o
C
T
A
= 25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
0
2
4
6
8
10
0
2
4
6
8
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
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