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參數(shù)資料
| 型號： | FDD5202P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel, Logic Level, MOSFET |
| 中文描述： | 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 59K |
| 代理商： | FDD5202P |
F
FDD5202P, Rev. A
FDD5202P
P-Channel, Logic Level, MOSFET
General Description
This P-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced process that has
been especially tailored to minimize the on state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
DC/DC converter
Motor drives
L.D.O.
February 1999
PRELIMINARY
Features
-8 A, -60 V. R
DS(on)
= 0.3
@ V
GS
= -10 V
R
DS(on)
= 0.5
@ V
GS
= -4.5 V.
Low gate charge (15.5nC typical).
Fast switching speed.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
-60
±
20
-8
-2.3
-15
39
2.8
1.3
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
(Note 1)
(Note 1a)
- Pulsed
Maximum Power Dissipation @ T
C
= 25
o
C
(Note 1)
T
A
= 25
o
C
(Note 1a)
T
A
= 25
o
C
(Note 1b)
Operating and Storage Junction Temperature Range
P
D
W
T
J
, T
stg
°
C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to- Case
(Note 1)
Thermal Resistance, Junction-to- Ambient
(Note 1b)
3.2
96
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDD5202P
FDD5202P
Reel Size
13’’
Tape width
16mm
Quantity
2500
G
S
D
TO-252
S
D
G
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